FGW50N60HD Datasheet, PDF (2/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 600V / 50A

FGW50N60HD
FWD Characteristics
Description
Forward Voltage Drop
Diode Reverse Recovery Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal resistance characteristics
Items
Thermal Resistance, Junction-Ambient
Thermal Resistance, IGBT Junction to Case
Thermal Resistance, FWD Junction to Case
Symbol
VF
trr1
trr2
Qrr
trr2
Qrr
Symbols
Rth(j-a)
Rth(j-c)_IGBT
Rth(j-c)_FWD
Conditions
IF=25A
VCC=30V,IF = 2.5A
-di/dt=200A/μs
VCC=400V
IF=25A
-diF/dt=200A/µs
Tj=25°C
VCC=400V
IF=25A
-diF/dt=200A/µs
Tj=175°C
Conditions
-
-
-
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Tj=25°C
Tj=175°C
Characteristics
min. typ. max.
Unit
-
2.0
2.6
V
-
1.4
-
V
-
25
33
ns
0.04
-
μs
-
0.08
-
μC
-
0.16
-
μs
-
0.75
-
μC
Characteristics
min. typ. max.
-
-
50
-
-
0.417
-
-
1.191
Units
°C/W
2