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| 2SK3596-01L_03 Datasheet, PDF (3/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET | |||
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2SK3596-01L,S,SJ
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
200
180
160
140
120
100
80
max.
60
typ.
40
20
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=30A, Tch=25°C
14
12
10
Vcc= 100V
8
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
100
10-1
10-2
10-1
100
101
VDS [V]
Ciss
Coss
Crss
102
Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID
IF=f(VSD):80µs Pulse test,Tch=25°C
100
t=f(ID):Vcc=48V, VGS=10V, RG=10â¦
103
tf
10
102
td(off)
td(on)
1
101
tr
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
100
10-1
100
101
102
ID [A]
3
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