2SK3596-01L_03 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3596-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200
V
VDSX *5
170
V
Continuous drain current
ID
±45
A
Pulsed drain current
ID(puls]
±180
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
45
A
Maximum Avalanche Energy
EAS *1
258.9
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C
1.67
W
Tc=25°C
270
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch ^<=150°C
*3 IF^<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 200V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=15A VGS=10V
ID=15A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
RGS=10 Ω
VCC=100V
ID=30A
VGS=10V
L=205µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
200
3.0
12.5
45
Typ.
10
50
25
1960
260
18
20
17
53
19
51
15
16
1.10
0.19
1.4
Max.
5.0
25
250
100
66
2940
390
27
30
26
80
29
76.5
22.5
24
1.65
Units
V
V
µA
nA
mΩ
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
75.0 °C/W
1