2SK3549-01 Datasheet, PDF (3/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3549-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10¹
Ciss
10⁰
10^-1
Coss
10^-2
Crss
10^-3
10⁰
10¹
10²
VDS [V]
Typical Switching Characteristics vs. ID
10^{3 t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω}
tf
10²
td(off)
td(on)
10¹
tr
10⁰
10^-1
10⁰
10¹
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25°C
12
10
Vcc= 180V
450V
8
720V
6
4
2
0
0
5
10 15 20 25 30 35 40
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
1000
I =4A
AS
800
600 I =6A
AS
400
I =10A
AS
200
0
0
25
50
75
100
125
150
starting Tch [°C]
3