2SK3549-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3549-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200401
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
11.6±0.2
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900
V
VDSX *5
900
V
Continuous drain current
ID
±10
A
Pulsed drain current
ID(puls]
±40
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
*2
10
A
Maximum Avalanche Energy
EAS
*1
330
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C
2.50
W
Tc=25°C
270
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=6.06mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph *2 Tch _=<150°C
*3 IF^<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 900V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V Tch=25°C
VDS=720V VGS=0V
VGS=±30V _VDS=0V
ID=5A VGS=10V
Tch=125°C
ID=5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=5A
VGS=10V
RGS=10 Ω
VCC=450V
ID=10A
VGS=10V
L=6.06mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
900
3.0
V
5.0 ^V
25
µA
250
100
nA
1.08
1.40 Ω
6
12
S
1250 1900
pF
160
240
12
18
26
39
ns
23
35
60
90
17
26
34.5
52
nC
5
7.5
12
18
10
A
0.90
1.50 V
3.1
µs
17.0
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
50.0 °C/W
1