1MBI600NN-060 Datasheet, PDF (3/4 Pages) Fuji Electric – IGBT MODULE ( N series )

1000
100
Switching time vs. R_G
V_CC=300V, I_C=600A, V_GE=±15V, T_j=25°C
ton
toff
tr
tf
10
1400
1200
1000
800
600
400
200
0
0
1
10
Gate resistance : R_G [Ω ]
Forward current vs. Forward voltage
V_GE=OV
T_j=125°C 25°C
1
2
3
4
Forward voltage : V_F [V]
Transient thermal resistance
Diode
0,1
IGBT
0,01
0,001
0,01
0,1
1
Pulse width : PW [sec]
Dynamic input characteristics
T _j= 2 5 ° C
500
25
V_CC=200V
300V
400
20
400V
300
15
200
10
100
5
0
0
0
500 1000 1500 2000 2500 3000 3500
Gate charge : Q_G [nC]
Reverse recovery characteristics
t_rr, I_rr vs. I_F
I_rr 125°C
I_rr 25°C
t_rr 125°C
100
t_rr 25°C
0
200
400
600
800
1000
Forward current : IF [A]
6000
Reversed biased safe operating area
+V_GE=15V, -V_GE<15V, T_j<125°C, R_G>2.7Ω
5000
4000
3000
SCSOA
(non-repetitive pulse)
2000
1000
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500 600
Collector-Emitter voltage : VCE [V]