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1MBI600NN-060 Datasheet, PDF (2/4 Pages) Fuji Electric – IGBT MODULE ( N series )
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Collector current vs. Collector-Emitter voltage
Tj=25°C
1400
1200
VGE=20V,15V,12V
1000
10V
800
600
400
200
0
0
1
2
3
4
Collector-Emitter voltage : VCE [V]
8V
5
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4
IC=
1200A
2
600A
300A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
100
Switching time vs. Collector current
VCC=300V, RG=2.7Ω , VGE±15V, Tj=25°C
ton
toff
tr
tf
1400
1200
Collector current vs. Collector-Emitter voltage
Tj=125°C
VGE=20V,15V,12V,
1000
10V
800
600
400
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4
IC=
1200A
600A
2
300A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=300V, RG=2.7Ω , VGE=±15V, Tj=125°C
toff
ton
tr
tf
100
10
0
200
400
600
800
Collector current : IC [A]
1000
10
0
200
400
600
800
Collector current : IC [A]
1000
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