1MBI3600U4D-170 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI3600U4D-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=1Ω, Rgoff=0.18Ω, Tj=125°C
2.4
2.2
ton
2.0
1.8
1.6
1.4
toff
1.2
1.0
tr
0.8
0.6
0.4
0.2
tf
0.0
0
1000 2000 3000 4000 5000 6000
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=1Ω, Rgoff=0.18Ω, Tj=125°C
2400
2200
Eoff
2000
1800
Eon
1600
1400
Err
1200
1000
800
600
400
200
0
0 1000 2000 3000 4000 5000 6000
Collector current : Ic [ A ] , Forward current : IF [ A ]
8000
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
7000
6000
5000
4000
3000
2000
1000
0
0
400
800
1200
1600
2000
Collector - Emitter voltage : VCE [ V ]
3
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=3600A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0
toff
3.0
tr
2.0
1.0
0.0
0
tf
1
2
3
4
5
6
Gate resistance : Rg [ Ω ]
4000
3600
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=3600A,VGE=±15V, Tj=125°C
Eon
3200
2800
2400
2000
Eoff
1600
1200
800
Err
400
0
0
1
2
3
4
5
6
Gate resistance : Rg [ Ω ]