1MBI3600U4D-170 Datasheet, PDF (2/6 Pages) Fuji Electric – IGBT MODULE

1MBI3600U4D-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
8000
Tj=25°C ,chip
7000
VGE=20 15V 12V
6000
5000
10V
4000
3000
2000
1000
8V
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
8000
7000
Tj=25°C Tj=125°C
6000
5000
4000
3000
2000
1000
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
10
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
8000
7000
VGE=20V15V
12V
6000
5000
10V
4000
3000
2000
8V
1000
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=7200A
2
Ic=3600A
Ic=1800A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
1000
800
600
400
200
0
0
Dynamic Gate charge (typ.)
Tj= 25°C
25
VCE
VGE
20
15
10
5
4000
8000
12000
Gate charge : Qg [ nC ]
0
16000
2