1MBI3600U4D-120 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI3600U4D-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=0.6Ω, Rgoff=0.27Ω, Tj=125°C
1.2
ton
1.0
toff
0.8
tr
0.6
0.4
tf
0.2
0.0
0
1000 2000 3000 4000
Collector current : Ic [ A ]
5000
6000
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=0.6Ω, Rgoff=0.27Ω, Tj=125°C
1200
Eoff
1000
800
Eon
600
Err
400
200
0
0 1000 2000 3000 4000 5000 6000
Collector current : Ic [ A ] , Forward current : IF [ A ]
8000
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
7000
6000
5000
4000
3000
2000
1000
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
3
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=3600A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0
tr
3.0
toff
2.0
1.0
0.0
0
tf
1
2
3
4
5
6
Gate resistance : Rg [ Ω ]
3500
3000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=3600A,VGE=±15V, Tj= 125°C
Eon
2500
2000
1500
Eoff
1000
500
0
0
Err
1
2
3
4
5
6
Gate resistance : Rg [ Ω ]