1MBI3600U4D-120 Datasheet, PDF (2/6 Pages) Fuji Electric – IGBT MODULE

1MBI3600U4D-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
8000
Tj=25°C ,chip
VGE=20V 15V 12V
7000
6000
5000
4000
10V
3000
2000
1000
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
8000
VGE=+15V,chip
7000
Tj=25°C
Tj=125°C
6000
5000
4000
3000
2000
1000
0
0.0
1.0
2.0
3.0
4.0
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
Coes
10
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Modules
8000
7000
6000
5000
4000
3000
2000
1000
0
0.0
Tj= 125°C, chip
VGE=20V 15V
12V
10V
8V
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=7200A
2
Ic=3600A
Ic=1800A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Tj= 25°C
1000
25
VGE
800
20
VCE
600
15
400
10
200
5
0
0
0 3000 6000 9000 12000 15000 18000
Gate charge : Qg [ nC ]
2