1MBI300U2H-060L-50 Datasheet, PDF (3/7 Pages) Fuji Electric – IGBT MODULE (U series) 600V / 300A / 1 in one package

1MBI300U2H-060L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C / chip
750
VGE=20V 15V
600
12V
10V
450
300
150
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
750
Tj=25°C Tj=125°C
600
450
300
150
0
0
1
2
3
4
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
100.0
Cies
10.0
1.0
Coes
Cres
0.1
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C / chip
750
VGE=20V 15V
600
12V
10V
450
300
150
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
IC=600A
IC=300A
IC=150A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
VCC=300V, IC=300A, Tj=25^oC
VGE
VCE
0
500
1000
1500
Gate charge : Qg [ nC ]