1MBI300U2H-060L-50 Datasheet, PDF (2/7 Pages) Fuji Electric – IGBT MODULE (U series) 600V / 300A / 1 in one package

1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
ICES
Gate-Emitter leakage current
IGES
Gate-Emitter threshold voltage
VGE(th)
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip *3
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
VF
(terminal)
VF
(chip)
trr
R lead
VGE = 0V
VCE = 600V
VCE = 0V
VGE=±20V
VCE = 20V
IC = 300mA
Tj= 25°C
VGE=15V
IC = 300A
Tj=125°C
Tj= 25°C
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
VCC = 300V
IC = 300A
VGE = ±15V
RG = 9.1 Ω
VGE=0V
IF = 300A
IF = 300A
VGE=0V
IF = 400A
IF = 400A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Items
Symbols Conditions
Thermal resistance (1device)
Contact Thermal resistance (1device) *4
Rth(j-c)
Rth(c-f)
IGBT
Inverse Diode
FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
-
-
2.00
Units
mA
-
-
400
nA
6.2
6.7
7.7
V
-
2.05 2.45
-
2.30
-
-
1.80
-
V
-
2.05
-
-
23.0
-
nF
-
0.40 1.20
-
0.22 0.60
-
0.16
-
μs
-
0.48 1.20
-
0.07 0.45
-
1.85 2.30
-
1.90
-
-
1.60
-
V
-
1.65
-
-
-
0.35
μs
-
1.85 2.35
-
1.90
-
-
1.60
-
V
-
1.65
-
-
-
0.35
μs
-
0.53
-
mΩ
Characteristics
min. typ. max.
-
-
0.125
-
-
0.23
-
-
0.16
-
0.025
-
Units
°C/W
2