1MBI2400U4D-120 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI2400U4D-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=1Ω, Rgoff=0.5Ω, Tj=125°C
1.2
toff
1.0
0.8
ton
0.6
tr
0.4
0.2
tf
0.0
0
500 1000 1500 2000 2500 3000 3500 4000
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=1Ω, Rgoff=0.5Ω, Tj=125°C
800
Eoff
700
600
500
Eon
400
300
Err
200
100
0
0 500 1000 1500 2000 2500 3000 3500 4000
Collector current : Ic [ A ] , Forward current : IF [ A ]
6000
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
5000
4000
3000
2000
1000
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
3
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=2400A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0
3.0
tr
toff
2.0
1.0
0.0
0
tf
2
4
6
8
10
Gate resistance : Rg [ Ω ]
2250
2000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=2400A,VGE=±15V, Tj=125°C
Eon
1750
1500
1250
1000
750
Eoff
500
250
0
0
Err
2
4
6
8
10
Gate resistance : Rg [ Ω ]