1MBI2400U4D-120 Datasheet, PDF (2/6 Pages) Fuji Electric – IGBT MODULE

1MBI2400U4D-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
5500
Tj=25°C,chip
5000
VGE=20 15V 12V
4500
4000
3500
3000
10V
2500
2000
1500
1000
500
8V
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
5500
VGE=+15V,chip
5000
Tj=25°C
Tj=125°C
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
Coes
10
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
5500
Tj= 125°C, chip
5000
VGE=20V 15V
12V
4500
4000
3500
3000
2500
10V
2000
1500
1000
8V
500
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=4800A
2
Ic=2400A
Ic=1200A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Tj= 25°C
1000
25
800
VCE
600
20
VGE
15
400
10
200
5
0
0
0 2000 4000 6000 8000 10000 12000
Gate charge : Qg [ nC ]
2