1MBI1600U4C-170 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI1600U4C-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=2.7Ω, Rgoff=1Ω, Tj= 125°C
2.4
2.2
ton
2.0
1.8
1.6
1.4
1.2
toff
1.0
tr
0.8
0.6
0.4
0.2
tf
0.0
0
400 800 1200 1600 2000 2400 2800
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=2.7Ω, Rgoff=1Ω, Tj=125°C
1100
1000
900
Eoff
800
Eon
700
Err
600
500
400
300
200
100
0
0 400 800 1200 1600 2000 2400 2800
Collector current : Ic [ A ] , Forward current : IF [ A ]
3600
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
3200
2800
2400
2000
1600
1200
800
400
0
0
400
800
1200
1600
2000
Collector - Emitter voltage : VCE [ V ]
3
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1600A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0
toff
3.0
tr
2.0
1.0
0.0
0
tf
2
4
6
8
10 12 14
Gate resistance : Rg [ Ω ]
1800
1600
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1600A,VGE=±15V, Tj=125°C
Eon
1400
1200
1000
Eoff
800
600
400
Err
200
0
0
2
4
6
8
10
12 14
Gate resistance : Rg [ Ω ]