1MBI1600U4C-170 Datasheet, PDF (2/6 Pages) Fuji Electric – IGBT MODULE

1MBI1600U4C-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
3600
Tj=25°C ,chip
3200
VGE=20V 15V 12V
2800
2400
10V
2000
1600
1200
800
400
8V
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
3600
3200
Tj=25°C Tj=125°C
2800
2400
2000
1600
1200
800
400
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
10
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
3600
Tj= 125°C, chip
3200
VGE=20V 15V 12V
2800
2400
2000
10V
1600
1200
800
8V
400
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=3200A
2
Ic=1600A
Ic=800A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
1000
800
Dynamic Gate charge (typ.)
Tj= 25°C
25
VCE
VGE
20
600
15
400
10
200
5
0
0
0 1000 2000 3000 4000 5000 6000 7000
Gate charge : Qg [ nC ]
2