1MBI150NH-060 Datasheet, PDF (3/4 Pages) Fuji Electric – IGBT MODULE

1000
100
Switching time vs. R_G
V_CC=300V, I_C=150A, V_GE=±15V, T_j=25°C
t_on
t_off
t_r
t_f
10
10
50
Gate resistance : R_G [Ω ]
350
300
250
200
150
100
50
0
0
Forward current vs. Forward voltage
V_GE=OV
T_j=125°C 25°C
1
2
3
4
Forward voltage : V_F [V]
Transient thermal resistance
1
Diode
IGBT
0,1
0,01
0,001
0,01
0,1
1
Pulse width : PW [sec]
Dynamic input characteristics
T_j=25°C
500
25
V_CC=200V
400
300V ₂₀
400V
300
15
200
10
100
5
0
0
0 100 200 300 400 500 600 700 800 900
Gate charge : Q_G [nC]
Reverse recovery characteristics
t_rr , I_rr vs. I_F
t_rr 125°C
100
I_rr 125°C
t_rr 25°C
I_rr 25°C
10
0
50
100
150
200
250
Forward current : I_F [A]
1400
Reversed biased safe operating area
+V_GE=15V, -V_GE<15V, T_j<125°C, R_G>16Ω
1200
1000
800
SCSOA
(non-repetitive pulse)
600
400
200
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500 600
Collector-Emitter voltage : V_CE [V]