1MBI150NH-060 Datasheet, PDF (2/4 Pages) Fuji Electric – IGBT MODULE

Collector current vs. Collector-Emitter voltage
T_j=25°C
350
V_GE=20V,15V,12V
300
250
10V
200
150
100
50
8V
0
0
1
2
3
4
5
6
Collector-Emitter voltage : V_CE [V]
Collector-Emitter vs. Gate-Emitter voltage
T_j=25°C
10
8
6
4
I_C=
300A
2
150A
75A
0
0
5
10
15
20
25
Gate-Emitter voltage : V_GE [V]
1000
100
Switching time vs. Collector current
V_CC=300V, R_G=16Ω , V_GE=±15V, T_j=25°C
tt_oofnf
t_r
t_f
Collector current vs. Collector-Emitter voltage
T_j=125°C
350
V_GE=20V,15V, 12V
300
250
10V
200
150
100
50
8V
0
0
1
2
3
4
5
6
Collector-Emitter voltage : V_CE [V]
Collector-Emitter vs. Gate-Emitter voltage
T_j=125°C
10
8
6
4
I_C=
300A
150A
2
75A
0
0
5
10
15
20
25
Gate-Emitter voltage : V_GE [V]
1000
Switching time vs. Collector current
V_CC=300V, R_G=16Ω , V_GE=±15V, T_j=125°C
tt_oofnf
t_r
t_f
100
10
0
50
100
150
200
250
Collector current : I_C [A]
10
0
50
100
150
200
250
Collector current : I_C [A]