1MBH10D-120_09 Datasheet, PDF (3/5 Pages) Fuji Electric – 1200V / 10A Molded Package

1MBH10D-120
Characteristics
Switching time vs. RG
Vcc=600V, IC=10A, VGE=±15V, Tj=25℃
Molded IGBT
Switching time vs. RG
Vcc=600V, IC=10A, VGE=±15V, Tj=125℃
Gate resistance : RG [Ω]
Dynamic input characteristics
Tj=25℃
Gate resistance : RG [Ω]
Capacitance vs. Collector-Emitter voltage
Tj=25℃
Gate charge : Qg [nQ]
Reverse Biased Safe Operating Area
+VGE=15V, -VGE≦15V, Tj=125℃, RG≧16Ω
Collector-Emitter voltage : VCE [V]
Typical short circuit capability
Vcc=800V, RG=16Ω, Tj=125℃
Collector-Emitter voltage : VCE [V]
3
Gate voltage : VGE [V]