1MBH10D-120_09 Datasheet, PDF (2/5 Pages) Fuji Electric – 1200V / 10A Molded Package

1MBH10D-120
Characteristics
Collector current vs. Collector-Emitter voltage
Tj = 25℃
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj = 125℃
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter Voltage
Tj = 25℃
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter Voltage
Tj = 125℃
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=16Ω, VGE=±15V, Tj=25℃
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=16Ω, VGE=±15V, Tj=125℃
Collector current : Ic [A]
2
Collector current : Ic [A]