YG861S12R Datasheet, PDF (2/4 Pages) Fuji Electric – High Voltage Schottky barrier diode

(120V / 5A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V F Forward Voltage (V)
Forward Power Dissipation (max.)
8
Io
l
6
360°
Square wave l =60°
Square wave l =120°
4
Sine wave l =180°
Square wave l =180°
DC
2
Per 1element
0
0
2
4
6
I F (AV) Average Forward Current (A)
YG861S12R (5A)
Reverse Characteristic (typ.)
10¹
Tj=150°C
Tj=125°C
10⁰
Tj=100°C
10^-1
10^-2
Tj= 25°C
10^-3
10^-4
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
4
360°
DC
VR
a
2
a =180°
0
0
20
40
60
80
100 120
140
V R Reverse Voltage (V)
Current Derating (IF(AV)-Tc) (max.)
160
150
140
130
120
110
100
90
360°
l
80
Io
VR=60V
70
DC
Sine wave l =180°
Square wave l =180°
Square wave l =120°
Square wave l =60°
60
0
2
4
6
8
IF(AV) Average Forward Current (A)
l :Conduction angle of forward current for each rectifier element
IF(AV):Average forward current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)