YG861S12R Datasheet, PDF (1/4 Pages) Fuji Electric – High Voltage Schottky barrier diode

YG861S12R (5A)
High Voltage Schottky barrier diode
Major characteristics
Characteristics YG861S12R Units Condition
VRRM
120
V
VF
0.88
V Tc=25°C MAX.
IO
5
A
Features
Low VF
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
(120V / 5A )
[0401]
Outline drawings, mm
10±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
1
2
1.2±0.2
0.7±0.2
5.08±0.4
0.6±0.2
2.7±0.2
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
Repetitive peak surge reverse voltage ^VRSM
tw=500ns, duty=1/40
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current
Operating junction temperature
V RRM
Viso
Io
IFSM
Tj
Terminals-to-Case,
AC.1min
Square wave, duty=1/2
Tc=104°C
Sine wave
10ms 1shot
Storage temperature
T stg
1
Rating
120
120
1500
5
75
+150
-40 to +150
2
Unit
V
V
V
A
A
°C
°C
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF
IFM=10A
Reverse current
Thermal resistance
IR
Rth(j-c)
VR=VRRM
Junction to case
Mechanical characteristics
Mounting torque
Recommended torque
Approximate mass
Max.
0.88
150
5.0
Unit
V
µA
°C/W
0.3 to 0.5
N·m
2
g