2SK3697-01 Datasheet, PDF (2/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3697-01
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
800
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
120
110
100
20V
90
10V
8V
80
7.0V
70
60
50
6.5V
40
30
20
VGS=6.0V
10
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
10
1
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
0.4
VGS=6V
6.5V
0.3
7.0V
8V10V
0.2
20V
0.1
0.1
0.1
1
10
100
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=21A,VGS=10V
0.5
0.4
0.3
max.
0.2
typ.
0.1
0.0
0
20
40
60
80
100
ID [A]
0.0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
2