2SK3697-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3697-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
200407
Outline Drawings (mm)
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
600
VDSX
600
Continuous Drain Current
ID
±42
±2.7
Pulsed Drain Current
ID(puls]
±168
Gate-Source Voltage
VGS
±30
Non-Repetitive
IAR
42
Maximum Avalanche current
Repetitive
IAR
21
Maximum Avalanche current
Non-Repetitive
EAS
828
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Peak Diode Recovery di/dt
-di/dt
100
Max. Power Dissipation
PD
600
2.50
Operating and Storage
Tch
+150
Temperature range
Tstg
-55 to +150
Unit
V
V
A
A
A
V
A
Remarks
VGS=-30V
Ta=25°C
Tch_=<25°C
A
Tch _=<150°C
mJ Note *2
kV/µs VDS_=<600V
kV/µs Note *3
A/µs Note *4
W ^Tc=25°C
Ta=25°C
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *2:StartingTch=25°C,L= 861µH,VCC=60V
See to the ‘Avalanche Energy’ graph
Note *3:IF_=< -ID, -di/dt = 100A/µs,VCC_=< BVDSS,Tch=<150°C
Note *4:IF_=< -ID, -dV/dt = 5kV/µs,VCC_=< BVDSS,Tch=<150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=21A VGS=10V
ID=21A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=21A
VGS=10V
RGS=10 Ω
VCC=300V
ID=42A
VGS=10V
L=861µH ^Tch=25°C
IF=42A VGS=0V Tch=25°C
IF=42A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min. Typ. Max. Units
600
V
3.0
5.0 ^V
10
25
µA
1.0
2.0 ^mA
10
100
nA
0.14
0.17 Ω
20
40
S
5100 7650
pF
700 1050
48
72
60
90
ns
90
135
180
270
30
45
105
160
nC
44
65
30
45
42
A
1.10
1.70 V
160
250
ns
1.00
2.5
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.208 °C/W
50.0 °C/W
www.fujielectric.co.jp/fdt/scd
1