|
2SK1280 Datasheet, PDF (2/2 Pages) Fuji Electric – N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) | |||
|
◁ |
N-channel MOS-FET
500V 0,5⦠18A 150W
> Characteristics
Typical Output Characteristics
2SK1280
F-V Series
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
â
1
â
2
â
3
â VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
â Tch [°C]
Typical Forward Transconductance vs. ID
â VGS [V]
Gate Threshold Voltage vs. Tch
â
44
â
5
â
6
â ID [A]
Typical Capacitance vs. VDS
â ID [A]
Typical Input Charge
â Tch [°C]
Forward Characteristics of Reverse Diode
â
7
â
8
ââ
9
â VDS [V]
Allowable Power Dissipation vs. TC
â
10
â
â Qg [nC]
Safe operation area
â
12
â VSD [V]
Transient Thermal impedance
11
â Tc [°C]
â VDS [V]
This specification is subject to change without notice!
t [s] â
|