2SK1280 Datasheet, PDF (1/2 Pages) Fuji Electric – N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W)

2SK1280
F-V Series
> Features
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
N-channel MOS-FET
500V 0,5Ω 18A 150W
> Outline Drawing
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
500
Continous Drain Current
ID
18
Pulsed Drain Current
I D(puls)
72
Continous Reverse Drain Current
I DR
18
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
PD
150
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
V_GS=0V
Gate Threshhold Voltage
V GS(th)
I_D=10mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I DSS
V_DS=500V T_ch=25°C
V_GS=0V
Gate Source Leakage Current
I GSS
V_GS=±20V V_DS=0V
Drain Source On-State Resistance
R DS(on)
I_D=9A
V_GS=10V
Forward Transconductance
g fs
I_D=9A
V_DS=25V
Input Capacitance
C iss
V_DS=25V
Output Capacitance
C oss
V_GS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t d(on)
V_CC=300V
tr
I_D=18A
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t d(off)
V_GS=10V
tf
R_GS=25Ω
Diode Forward On-Voltage
V SD
I_F=I_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t rr
I_F=I_DR V_GS=0V
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
500
V
2,1
3,0 4,0 V
10 500 µA
10 100 nA
0,35 0,5 Ω
8
15
S
2400 3600 pF
300 450 pF
150 220 pF
35
50 ns
150 220 ns
450 650 ns
180 270 ns
0,85 1,6 V
150 200 ns
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
35 °C/W
0,83 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX [phone] - http://www.collmer.com