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1MBG05D-060 Datasheet, PDF (2/4 Pages) Fuji Electric – Fuji Discrete Package IGBT
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Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
12
10
V GE=20V,15V
12V
8
6
10V
4
2
8V
0
0
1
2
3
4
5
6
Collector-Emitter Voltage : VCE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C
12
10
8
6
4
IC=
10A
2
5A
2.5A
0
0
5
10
15
20
25
Gate-Emitter Voltage : VGE [V]
1000
Switching Time vs. Collector Current
V CC= 3 0 0 V , R G= 3 3 Ω , VGE=±15V, Tj=25°C
toff
tf
100
ton
tr
10
0
2
4
6
8
10
Collector Current : IC [A]
Collector Current vs. Collector-Emitter Voltage
T j=125°C
12
V GE= 2 0 V , 1 5 V
10
12V
8
6
10V
4
2
8V
0
0
1
2
3
4
5
6
Collector-Emitter Voltage : VCE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j=125°C
12
10
8
6
4
IC=
10A
2
5A
2.5A
0
0
5
10
15
20
25
Gate-Emitter Voltage : VGE [V]
1000
Switching Time vs. Collector Current
V CC= 3 0 0 V , RG= 3 3 Ω , VGE=±15V, Tj=125°C
toff
tf
ton
100
tr
10
0
2
4
6
8
10
Collector Current : IC [A]
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