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1MBG05D-060 Datasheet, PDF (1/4 Pages) Fuji Electric – Fuji Discrete Package IGBT
Fuji Discrete Package IGBT
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Outline Drawing
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
DC
Collector Current
DC
1ms
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Temperature
Storage Temperature
Tc= 25°C
Tc=100°C
Tc= 25°C
IC 25
IC 100
IC PULSE
PC
PC
Tj
Tstg
Ratings
600
± 20
13
5
52
50
25
+150
-40 ∼ +125
Units
V
V
A
W
W
°C
°C
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Switching Time
Turn-off Time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=5mA
VGE=15V IC=5A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=5A
VGE=±15V
RG=330Ω
VCC=300V
IC=5A
VGE=+15V
RG=33Ω
IF=5A VGE=0V
IF=5A, VGE=-10V, di/dt=100A/µs
Min.
5.5
Typ.
400
85
15
0.16
0.11
0.30
Max.
1.0
20
8.5
3.0
1.2
0.6
1.0
0.35
Units
mA
µA
V
pF
µs
µs
0.35
3.0
V
300
ns
Test Conditions
IGBT
Diode
Min.
Typ.
Max.
2.50
5.00
Units
°C/W