YA982C6R Datasheet, PDF (10/12 Pages) Fuji Electric – SILICON DIODE

Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
Reverse Characteristic (typ.)
^
Tj=150°C
^
Tj=125°C
Tj=100°C
^
^
Tj=25°C
^
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VF Forward Voltage (V)
^








VR Reverse Voltage (V)
Forward Power Dissipation (max.)
30
360˃
25
I₀
Е
20
Square wave λ=60°
Square wave λ=120°
15
Sine wave λ=180°
Square wave λ=180°
%$
10
5
Per 1element
0
0
2
4
6
8
IF(AV) Average Forward Current (A)
0.035
0.030
0.025
Reverse Power Dissipation (max.)
DC
360˃
VR
Ћ
0.020
0.015
α=180°
0.010
0.005
0.000
0
100
200
300
400
500
600
700
VR Reverse Voltage (V)
Fuji Electric Device Technology Co.,Ltd.


MS5D3304

10/12

^H04-004-03a