MRF6P9220HR3_08 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 10 Ω
f = 850 MHz
f = 910 MHz
Z_load
f = 910 MHz
f = 850 MHz
Z_source
V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 47 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
850
3.50 - j7.10
6.04 - j0.49
865
3.59 - j7.07
6.83 - j1.14
880
3.03 - j6.98
7.41 - j1.19
895
2.42 - j6.20
7.60 - j0.98
910
2.26 - j5.39
8.06 - j0.45
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
9