MRF6P9220HR3_08 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
21
T_C = −30_C
20.5 _Gps
20
19.5 25_C
72
−30_C
64
25_C ₅₆
85_C
48
19
40
18.5 ^85_C
18
17.5
17
7 10
η_D
V_DD = 28 Vdc
I_DQ = 1600 mA
f = 880 MHz
100
32
24
16
8
500
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
20.5
I_DQ = 1600 mA
19.5
f = 880 MHz
18.5
17.5
16.5
V_DD = 24 V _{28 V}
32 V
15.5
14.5
0
50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁸
10⁷
10⁶
RF Device Data
Freescale Semiconductor
10⁵
90
110 130 150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 47 W Avg., and η_D = 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
MRF6P9220HR3
7