MRF1511NT1_06 Datasheet, PDF (9/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 5. Common Source Scattering Parameters (V_DD = 7.5 Vdc)
I_DQ = 150 mA
f
MHz
30
S₁₁
|S₁₁|
∠φ
0.88
- 165
S₂₁
|S₂₁|
∠φ
18.92
95
50
0.88
- 171
11.47
91
100
0.87
- 175
5.66
85
150
0.87
- 176
3.75
82
200
0.87
- 177
2.78
78
250
0.87
- 177
2.16
75
300
0.88
- 177
1.77
72
350
0.88
- 177
1.49
69
400
0.88
- 177
1.26
66
450
0.88
- 177
1.08
64
500
0.89
- 176
0.96
63
S₁₂
|S₁₂|
∠φ
0.015
8
0.016
-5
0.016
-7
0.015
-5
0.014
-6
0.014
- 10
0.012
- 17
0.013
- 11
0.013
- 17
0.011
- 20
0.012
- 20
f
MHz
30
50
100
150
200
250
300
350
400
450
500
S₁₁
|S₁₁|
∠φ
0.89
- 166
0.88
- 172
0.87
- 175
0.87
- 177
0.87
- 177
0.88
- 177
0.88
- 177
0.88
- 177
0.88
- 177
0.88
- 177
0.89
- 177
I_DQ = 800 mA
S₂₁
S₁₂
|S₂₁|
∠φ
|S₁₂|
∠φ
18.89
95
0.014
10
11.44
91
0.015
8
5.65
86
0.016
-2
3.74
82
0.014
-8
2.78
78
0.013
- 18
2.16
75
0.012
- 11
1.77
73
0.015
- 15
1.50
70
0.009
-7
1.26
67
0.012
-3
1.09
65
0.012
- 18
0.97
64
0.009
- 10
f
MHz
30
50
100
150
200
250
300
350
400
450
500
S₁₁
|S₁₁|
∠φ
0.90
- 168
0.89
- 173
0.88
- 176
0.88
- 177
0.88
- 177
0.88
- 178
0.88
- 177
0.89
- 177
0.89
- 177
0.89
- 177
0.89
- 177
|S₂₁|
17.89
10.76
5.32
3.53
2.63
2.05
1.69
1.43
1.22
1.06
0.94
I_DQ = 1.5 A
S₂₁
∠φ
95
91
86
83
80
77
75
72
70
68
67
S₁₂
|S₁₂|
∠φ
0.013
2
0.013
3
0.014
- 19
0.013
-6
0.011
-4
0.012
- 14
0.013
-2
0.010
-9
0.014
-3
0.011
-8
0.011
- 15
S₂₂
|S₂₂|
∠φ
0.84
- 169
0.84
- 173
0.84
- 176
0.85
- 176
0.84
- 176
0.85
- 176
0.86
- 176
0.86
- 176
0.87
- 175
0.87
- 175
0.88
- 175
S₂₂
|S₂₂|
∠φ
0.85
- 170
0.84
- 174
0.85
- 176
0.84
- 177
0.85
- 177
0.85
- 176
0.86
- 176
0.87
- 176
0.87
- 176
0.87
- 175
0.88
- 175
S₂₂
|S₂₂|
∠φ
0.86
- 172
0.86
- 175
0.86
- 177
0.86
- 177
0.86
- 177
0.86
- 177
0.87
- 177
0.87
- 176
0.88
- 176
0.88
- 176
0.88
- 176
RF Device Data
Freescale Semiconductor
MRF1511NT1
9