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MRF1511NT1_06 Datasheet, PDF (2/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor | |||
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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
Gate - Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IDSS
â
â
IGSS
â
â
1
μAdc
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 170 μA)
VGS(th)
1
1.6
2.1
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
â
0.4
â
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
â
100
â
pF
Coss
â
53
â
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
â
8
â
pF
Functional Tests (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
Gps
â
13
â
dB
η
â
70
â
%
MRF1511NT1
2
RF Device Data
Freescale Semiconductor
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