MW7IC2040NR1 Datasheet, PDF (8/29 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

TYPICAL CHARACTERISTICS
34
G_ps
33
65
−10
ACPR
55
−20
32
45
−30
PAE
31
35
−40
30
25
−50
29
V_DD = 28 Vdc, I_DQ1 = 130 mA, I_DQ2 = 330 mA, f = 1960 MHz ₁₅
−60
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
28
5
−70
1
8
16
24
32
40
P_out, OUTPUT POWER (WATTS)
Figure 9. Power Gain, ACPR and Power Added
Efficiency versus Output Power
40
38
25_C −30_C
85_C ⁵⁰
45
−10
−16
36 _{TC = −30_C}
34
32
30
G_ps
25_C
85_C
PAE
−30_C ⁴⁰
−22
ACPR
35
−28
30
−34
25
−40
28
V_DD = 28 Vdc, I_DQ1 = 130 mA
20
−46
26
I_DQ2 = 330 mA, f = 1960 MHz
Single−Carrier W−CDMA, 3.84 MHz
15
−52
24
Channel Bandwidth, Input Signal
10
−58
PAR = 7.5 dB @ 0.01% Probability on CCDF
22
5
−64
1
10
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier W - CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
40
0
Gain
35
−4
30
−8
25
−12
IRL
V_DD = 28 Vdc
20
P_out = 25 dBm
−16
I_DQ1 = 130 mA
I_DQ2 = 330 mA
15
−20
1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
8
RF Device Data
Freescale Semiconductor