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MW7IC2040NR1 Datasheet, PDF (1/29 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor
Technical Data
Document Number: MW7IC2040N
Rev. 1, 11/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2040N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1805 to 1990 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 32 dB
Power Added Efficiency — 17.5%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 40 Watts
CW Pout.
• Typical Pout @ 1 dB Compression Point ' 30 Watts CW
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 =
430 mA, Pout = 16 Watts Avg., 1805 - 1880 MHz
Power Gain — 33 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA,
Pout = 40 Watts CW, 1805 - 1880 MHz and 1930 - 1990 MHz
Power Gain — 31 dB
Power Added Efficiency — 50%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
MW7IC2040NR1
MW7IC2040GNR1
MW7IC2040NBR1
1930 - 1990 MHz, 1805 - 1880 MHz,
4 W AVG., 28 V
SINGLE W - CDMA, GSM EDGE, GSM
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2040NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2040GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2040NBR1
GND 1
VDS1
2
VGS2
3
VGS1
4
NC 5
RFin 6
16 GND
15 NC
14
RFout/VDS2
NC 7
RFin
RFout/VDS2
VGS1
8
VGS2
9
VDS1 10
13 NC
VGS1
Quiescent Current
GND 11
12 GND
VGS2
Temperature Compensation (1)
(Top View)
VDS1
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
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