MRF6S9045NR1_08 Datasheet, PDF (8/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
24
23 ^{TC = −30_C}
G_ps
22
25_C
21
85_C
−30_C
80
70
25_C
60
85_C
50
20
40
19
30
18
η_D
17
16
1
V_DD = 28 Vdc
I_DQ = 350 mA
f = 880 MHz
10
20
10
0
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
23.5
23
22.5
22
21.5
21
20.5
20
19.5
19
18.5
18
17.5
0
10 20
32 V
28 V
V_DD = 24 V
30 40 50 60 70
I_DQ = 350 mA
f = 880 MHz
80 90 100
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 10 W Avg., and η_D = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9045NR1 MRF6S9045NBR1
8
RF Device Data
Freescale Semiconductor