MRF6S9045NR1_08 Datasheet, PDF (17/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
4
Date
Aug. 2008
Description
• Listed replacement part and Device Migration notification reference number, p. 1
• Listed MRF6S9045NBR1 as no longer manufactured, p. 1
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View
Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC
Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3.
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q) and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Corrected C_iss test condition to indicate AC stimulus on the V_GS connection versus the V_DS connection,
Dynamic Characteristics table, p. 2
• Updated Part Numbers in Table 6 Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 6
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 8
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Added Product Documentation and Revision History, p. 17
RF Device Data
Freescale Semiconductor
MRF6S9045NR1 MRF6S9045NBR1
17