MRF6S24140HR3_08 Datasheet, PDF (8/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Mar. 2007
Apr. 2008
Description
• Initial Release of Data Sheet
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
MRF6S24140HR3 MRF6S24140HSR3
8
RF Device Data
Freescale Semiconductor