MRF6S24140HR3_08 Datasheet, PDF (5/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — 2450 MHz
16
I_DQ = 1200 mA
f = 2450 MHz
15
G_ps
14
50
V_DD = 28 V _{32 V}
40
30 V
30
13
20
12
32 V ₁₀
η_D
11
1
10
28 V
100
30 V
0
500
P_out, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of V_DD
14.5
60
G_ps
14
50
13.5
40
13
30
12.5
20
15
G_ps
14
1400 mA
12
η_D
11.5
1
V_DD = 28 V
I_DQ = 1200 mA
10
f = 2450 MHz
0
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
10⁷
1200 mA
1000 mA
1100 mA 1300 mA
10⁶
13
12
11
V_DD = 28 V
f = 2450 MHz
10
1
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total I_DQ
RF Device Data
Freescale Semiconductor
10⁵
10⁴
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 140 W CW, and η_D = 45%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 6. MTTF versus Junction Temperature
MRF6S24140HR3 MRF6S24140HSR3
5