MRF21045LR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2170 MHz
Z_load
f = 2110 MHz
f = 2110 MHz
Z_source
f = 2170 MHz
Z_o = 25 Ω
V_DD = 28 Vdc, I_DQ = 500 mA, P_out = 10 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
2170
18.88 - j8.86
19.80 - j9.93
19.68 - j10.44
3.11 - j4.18
3.09 - j3.87
3.12 - j3.72
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 13. Series Equivalent Source and Load Impedance
MRF21045LR3 MRF21045LSR3
8
RF Device Data
Freescale Semiconductor