MRF21045LR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16
I_DQ = 700 mA
15.5
600 mA
15 ^{500 mA}
400 mA
14.5
300 mA
14
4
6
8 10
V_DD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
30
50 60
P_out, OUTPUT POWER (WATTS) PEP
Figure 9. Two-Tone Power Gain versus
Output Power
40
−10
35 ^IRL
−15
η
30
−20
V_DD = 28 Vdc
P_out = 45 W (PEP)
25 _{IDQ = 500 mA}
−25
f1 = f − 5 MHz, f2 = f + 5 MHz
20
−30
IMD
15
−35
G_ps
10
−40
2090
2110
2130
2150
2170
2190
f, FREQUENCY (MHz)
Figure 10. Two-Tone Broadband Performance
−25
3rd Order
−30
−35
V_DD = 28 Vdc
P_out = 45 W (PEP)
I_DQ = 500 mA
−40 f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2
5th Order
−45
−50 ^{7th Order}
−55
0.1
1
10
30
Df, TONE SEPARATION (MHz)
Figure 11. Intermodulation Distortion
Products versus Two - Tone Spacing
W - CDMA TEST SIGNAL
+20
3.84 MHz
+30
Channel BW
0
−10
−20
−30
−40
−50
−ACPR in +ACPR in
−60 −IM3 in
3.84 MHz BW 3.84 MHz BW +IM3 in
−70 ^{3.84 MHz BW}
3.84 MHz BW
−80
−25 −20 −15 −10 −5 0 5 10 15 20 25
f, FREQUENCY (MHz)
Figure 12. 2-Carrier W-CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF21045LR3 MRF21045LSR3
7