MW7IC2220NR1 Datasheet, PDF (7/27 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

31.5
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30.5
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29.5
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28.5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, P_out = 18 W (PEP), I_DQ1 = 80 mA
−20 ^{IDQ2 = 300 mA, Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2140 MHz
−30
IM3−U ^IM3−L
−40
IM5−L
IM5−U
−50
IM7−L
−60
IM7−U
−70
1
10
100
TWO−TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
1
G_ps
0
PARC
−1
40
−25
35
−30
30
−35
−1 dB = 6.36 W
−2
−3 dB = 12.7 W ²⁵
−40
ACPR
−3
−2 dB = 9.45 W
20
−45
−4
V_DD = 28 Vdc, I_DQ1 = 80 mA, I_DQ2 = 300 mA, f = 2140 MHz ₁₅
−50
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
η_D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
−5
10
−55
2
4
6
8
10
12
14
P_out, OUTPUT POWER (WATTS)
Figure 10. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
45
40
G_ps
35
30
T_C = −30°C
−30°C
η_D
−15
25°C
85°C −20
25°C _−25
−30°C
−30
25 25°C ^85°C
ACPR
−35
20
−40
V_DD = 28 Vdc, I_DQ1 = 80 mA
15
I_DQ2 = 300 mA, f = 2140 MHz ^−45
10
Single−Carrier W−CDMA
−50
3.84 MHz Channel Bandwidth
5
Input Signal PAR = 7.5 dB
−55
@ 0.01% Probability on CCDF
0
−60
1
10
50
P_out, OUTPUT POWER (WATTS) AVG.
Figure 11. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
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