MRF8S8260H Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

V_DD = 28 Vdc, I_DQ = 1500 mA, P_out = 70 W Avg.
f
MHz
Z_source

Z_load

820
3.19 -- j1.47
1.38 -- j0.80
840
2.98 -- j1.61
1.37 -- j0.52
860
2.78 -- j1.75
1.38 -- j0.29
880
2.50 -- j1.87
1.44 -- j0.14
900
2.20 -- j1.92
1.48 -- j0.01
920
1.96 -- j1.79
1.52 + j0.12
940
1.82 -- j1.58
1.59 + j0.32
960
1.74 -- j1.35
1.68 + j0.51
980
1.68 -- j1.12
1.77 + j0.61
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 9. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor, Inc.
MRF8S8260HR3 MRF8S8260HSR3
7