MRF8S8260H Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF8S8260H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 790 to
895 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
 Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
1500 mA, P_out = 70 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
_D
Output PAR ACPR
(%)
(dB)
(dBc)
850 MHz
21.3
36.2
6.5
--37.0
875 MHz
21.4
37.4
6.3
--36.7
895 MHz
21.1
37.5
6.2
--36.9
 Capable of Handling 7:1 VSWR, @ 32 Vdc, 875 MHz, 390 Watts CW ⁽¹⁾
Output Power (3 dB Input Overdrive from Rated P_out), Designed for
Enhanced Ruggedness
 Typical P_out @ 1 dB Compression Point ≃ 260 Watts CW ⁽¹⁾
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 16.
MRF8S8260HR3
MRF8S8260HSR3
850--895 MHz, 70 W AVG. 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF8S8260HR3
CASE 465C--03
NI--880S
MRF8S8260HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(2,3)
CW Operation @ T_C = 25C
Derate above 25C
Table 2. Thermal Characteristics
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
Value
--0.5, +70
--6.0, +10
32, +0
-- 65 to +150
150
225
201
0.94
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Characteristic
Symbol
Value ^(3,4)
Unit
Thermal Resistance, Junction to Case
R_JC
C/W
Case Temperature 83C, 70 W CW, 28 Vdc, I_DQ = 1500 mA, 895 MHz
0.36
Case Temperature 80C, 260 W CW⁽¹⁾, 28 Vdc, I_DQ = 1500 mA, 895 MHz
0.31
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S8260HR3 MRF8S8260HSR3
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