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MRF7S27130HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS
â 20
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
â30 TwoâTone Measurements, 10 MHz Tone Spacing
â 40
3rd Order
â 50
5th Order
â 60
â 70
7th Order
â 80
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1500 mA
â10 TwoâTone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
â 20
IM3 â U
â30 IM3âL
â40 IM5âL
IM5 â U
IM7 â L
â 50
IM7 â U
â 60
1
10
100
TWOâTONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
55
50
VDD = 28 Vdc, IDQ = 1500 mA
f = 2600 MHz, 802.16d, 64 QAM 3/4
45 4 Bursts, 7 MHz Channel
40 Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
35
30
â 10
â30_C 25_C â15
85_C â20
85_C â25
25_C â30
â 30_C
â 35
25
20 Gps
15
â 40
TC = â30_C â45
â 50
10 ηD
5
ACPR
25_C â55
85_C
â 60
0
â 65
1
10
100
300
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
19
TC = â30_C
18
17
Gps
16
25_C
85_C
60
â30_C 25_C 50
85_C
40
30
15
20
14
ηD
13
1
VDD = 28 Vdc
IDQ = 1500 mA
f = 2600 MHz
10
100
10
0
300
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
18
IDQ = 1500 mA
f = 2600 MHz
17
16
15
32 V
14
VDD = 24 V
28 V
13
0 25 50 75 100 125 150 175 200
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S27130HR3 MRF7S27130HSR3
7
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