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MRF7S27130HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS
18
25
17.9
VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1500 mA
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth
24
17.8 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
23
17.7
22
ηD
17.6
21
17.5
20
â5
17.4
Gps
17.3
IRL
17.2
â 46
â6
â 47
â7
â 48
â8
17.1
â 49
â9
ACPR
17
â 50
â 10
2500 2525 2550 2575 2600 2625 2650 2675 2700
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout = 23 Watts Avg.
17.7
33
17.6
VDD = 28 Vdc, Pout = 43 W (Avg.), IDQ = 1500 mA
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth
32
17.5 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
31
17.4
30
ηD
17.3
29
17.2
28
â5
17.1
Gps
â 36
â6
17
â 37
â7
IRL
16.9
â 38
â8
16.8
â 39
â9
ACPR
16.7
â 40
â 10
2500 2525 2550 2575 2600 2625 2650 2675 2700
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 43 Watts Avg.
19
IDQ = 2250 mA
18 2000 mA
1500 mA
17
1200 mA
16
1000 mA
15
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
TwoâTone Measurements, 10 MHz Tone Spacing
14
1
10
100
500
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â 10
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
â20 TwoâTone Measurements, 10 MHz Tone Spacing
â 30
1000 mA
IDQ = 2250 mA
â 40
â 50
â 60
1
1200 mA
1500 mA
10
2000 mA
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S27130HR3 MRF7S27130HSR3
6
RF Device Data
Freescale Semiconductor
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