MRF7S19080HR3 Datasheet, PDF (7/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
− 10
V_DD = 28 Vdc, I_DQ = 750 mA
−20 ^{f1 = 1955 MHz, f2 = 1965 MHz}
Two −Tone Measurements, 10 MHz Tone Spacing
− 30
− 40
− 50
3rd Order
5th Order
− 60
− 70
1
7th Order
10
100 400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 80 W (PEP), I_DQ = 750 mA
−10 ^{Two −Tone Measurements}
(f1 + f2)/2 = Center Frequency of 1960 MHz
− 20
IM3 −U
− 30
IM3 −L
IM5 −U
− 40
IM5 −L
− 50
IM7 −U
IM7 −L
− 60
1
10
100
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
60
0
Ideal ₅₅
−1
50
−1 dB = 23 W
−2
45
−2 dB = 32.2 W
−3
40
−3 dB = 52.4 W
Actual
−4
V_DD = 28 Vdc, I_DQ = 750 mA
35
f = 1960 MHz, Input PAR = 7.5 dB
−5
30
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
− 20
V_DD = 28 Vdc, I_DQ = 750 mA, f = 1960 MHz
Single −Carrier W−CDMA, PAR = 7.5 dB, ACPR @
−30 5 MHz Offset in 3.84 MHz Integrated Bandwidth
Uncorrected, Upper and Lower
− 40
DPD Corrected
− 50
No Memory Correction
− 60
DPD Corrected, with Memory Correction
− 70
34 35 36 37 38 39 40 41 42 43 44
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
20
19
G_ps
18
17
T_C = −30_C
25_C
85_C
66
− 30_C
25_C
55
85_C
44
33
16
22
15
η_D
14
0.1
1
V_DD = 28 Vdc
I_DQ = 750 mA
f = 1960 MHz
10
100
11
0
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
7