MRF7S19080HR3 Datasheet, PDF (13/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 10 Ω
Z_load
f = 2070 MHz
f = 1950 MHz
f = 2070 MHz
f = 1950 MHz
Z_in
f
MHz
V_DD = 28 Vdc, I_DQ = 750 mA
Z_in
Z_load
W
W
1950
1.87 - j6.10
2.98 - j5.42
1960
1.94 - j6.25
3.07 - j5.47
1970
1.77 - j6.04
2.87 - j5.26
1980
1.52 - j5.47
2.53 - j4.77
1990
1.46 - j4.92
2.35 - j4.26
2000
1.49 - j4.62
2.30 - j3.99
2010
1.53 - j4.64
2.34 - j3.98
2020
1.50 - j4.85
2.34 - j4.20
2030
1.50 - j5.15
2.40 - j4.44
2040
1.62 - j5.56
2.59 - j4.75
2050
1.63 - j5.90
2.68 - j5.03
2060
1.47 - j5.86
2.52 - j4.98
2070
1.38 - j5.40
2.35 - j4.54
Z_in = Device input impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Device
Under Test
Output
Matching
Network
Z _in
Z _load
Figure 23. Series Equivalent Input and Load Impedance — TD - SCDMA
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
13