MRF6VP41KHR6 Datasheet, PDF(7/13 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MRF6VP41KHR6 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

◁

Zo = 2 Î©

f = 450 MHz

Zsource

f = 450 MHz

Zload

VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak

MHz

Zsource

Zload

450

0.86 + j1.06

1.58 + j1.22

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 13. Series Equivalent Source and Load Impedance

RF Device Data

Freescale Semiconductor

MRF6VP41KHR6 MRF6VP41KHSR6

▷